 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5407 DESCRIPTION *High Breakdown Voltage: VCBO= 1700V (Min) *High Switching Speed *Wide Area of Safe Operation APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w ww scs .i 1700 V 1700 V 600 V 5 V 15 A 20 A 8 A .cn mi e ICM Collector Current- Peak IB B Base Current- Continuous Collector Power Dissipation @ TC=25 100 W PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 3 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5407 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 1.88A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 1.88A VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 VEB= 5V; IC= 0 1.5 50 1.0 50 V A mA A ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain IC= 7.5A; VCE= 5V fT Current-Gain--Bandwidth Product IC= 0.5A; VCE= 10V Switching Times tstg Storage Time tf Fall Time w w. w IC= 8A, IB1= 2A; IB2= -4A .cn mi cse is 6 14 3 MHz 4.0 s 0.3 s isc Websitewww.iscsemi.cn 2 |
Price & Availability of 2SC5407
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |